«Self-organized» InAs/GaAs quantum dots
Identifieur interne : 000074 ( Main/Exploration ); précédent : 000073; suivant : 000075«Self-organized» InAs/GaAs quantum dots
Auteurs : RBID : ISTEX:11544_1995_Article_BF02457200.pdfDescripteurs français
- Wicri :
- topic : Acte de congrès.
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Abstract
We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.
DOI: 10.1007/BF02457200
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<front><div type="abstract" xml:lang="eng">We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.</div>
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<abstract lang="eng">We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.</abstract>
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