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«Self-organized» InAs/GaAs quantum dots

Identifieur interne : 000074 ( Main/Exploration ); précédent : 000073; suivant : 000075

«Self-organized» InAs/GaAs quantum dots

Auteurs : RBID : ISTEX:11544_1995_Article_BF02457200.pdf

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English descriptors

Abstract

We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.

DOI: 10.1007/BF02457200

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Le document en format XML

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